RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.

技术特性 Features
  • High power gain:
    Pout>2W, Gp>16dB
    @Vdd=7.2V,f=175MHz, 520MHz
  • High Efficiency: 65%typ. (175MHz)
  • High Efficiency: 65%typ. (520MHz)
应用领域 APPLICATION

For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

订购信息 Ordering Information
  • RD02MUS1B
外观尺寸图 Outline Drawing

RD02MUS1B 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD02MUS1B 数据资料DataSheet下载：PDF Rev.V2 2 页
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