RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

RD04HMS2 is MOS FET type transistor specifically designed for VHF/UHF/890-950MHz RF power amplifiers applications.

技术特性 Features
  • High Power gain and High Efficiency
    Pout=5.0Wtyp., Gp=14dBtyp.
    Drain Effi.=53%typ.
    @Vds=12.5V, Pin=0.2W, f=950MHz
  • Integrated gate protection diode
应用领域 APPLICATION

For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets.

订购信息 Ordering Information
  • RD04HMS2
外观尺寸图 Outline Drawing

RD04HMS2 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD04HMS2 数据资料DataSheet下载:PDF Rev.V2 2 页