技术特性 Features

• High Power gain and High Efficiency
  Pout=5.0Wtyp., Gp=14dBtyp.
  Drain Effi.=53%typ.
  @Vds=12.5V, Pin=0.2W, f=950MHz
  
• Integrated gate protection diode

应用领域 APPLICATION

For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets.

订购信息 Ordering Information

• RD04HMS2

外观尺寸图 Outline Drawing