技术特性 Features

• High power gain and High Efficiency.
  Typical Po Gp ηD
  (175MHz) 7.2W 13.8dB 65%
  (527MHz) 8W 13.0dB 63%
  (870MHz) 7W 11.5dB 58%
  
• Integrated gate protection diode.

应用领域 APPLICATION

For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.

订购信息 Ordering Information

• RD07MUS2B

外观尺寸图 Outline Drawing