RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

技术特性 Features
  • High power gain and High Efficiency.
    Typical Po Gp ηD
    (175MHz) 7.2W 13.8dB 65%
    (527MHz) 8W 13.0dB 63%
    (870MHz) 7W 11.5dB 58%
  • Integrated gate protection diode.
应用领域 APPLICATION

For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.

订购信息 Ordering Information
  • RD07MUS2B
外观尺寸图 Outline Drawing

RD07MUS2B 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD07MUS2B 数据资料DataSheet下载:PDF Rev.V2 2 页