RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.

技术特性 Features
  • High power gain:
    Pout>7W, Gp>10dB
    @Vdd=7.2V,f=520MHz
  • High Efficiency: 60%typ. (175MHz)
  • High Efficiency: 55%typ. (520MHz)
应用领域 APPLICATION

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

订购信息 Ordering Information
  • RD07MVS1B
外观尺寸图 Outline Drawing

RD07MVS1B 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD07MVS1B 数据资料DataSheet下载：PDF Rev.V2 2 页
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