RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

技术特性 Features
  • High Power Gain
    Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
  • High Efficiency: 55%min. (175MHz)
  • No gate protection diode
应用领域 APPLICATION

For output stage of high power amplifiers in VHF band mobile radio sets.

订购信息 Ordering Information
  • RD12MVP1
外观尺寸图 Outline Drawing

RD12MVP1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD12MVP1 数据资料DataSheet下载:PDF Rev.V2 2 页