RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

技术特性 Features
  • High power gain:
    Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
  • High Efficiency: 55%typ.
应用领域 APPLICATION

For output stage of high power amplifiers in UHF band mobile radio sets.

订购信息 Ordering Information
  • RD30HUF1
外观尺寸图 Outline Drawing

RD30HUF1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD30HUF1 数据资料DataSheet下载:PDF Rev.V2 2 页