2N5302 High Power NPN Bipolar Power Transistor
The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.
应用
- Low-frequency Amplifi er, muting circuit
技术特性
- Low Collector-Emitter Saturation Voltage
VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| 2N5302G |
Active |
|
High Power NPN Bipolar Power Transistor |
TO-204-2 |
1-07 |
|
Tray Foam |
100 |
$1.872 |
数据资料DataSheet下载
