2N5883 25 A, 60 V PNP Bipolar Power Transistor
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
应用
- Low-frequency Amplifi er, muting circuit
技术特性
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
- Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
- Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
- High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| 2N5883G |
Active |
|
25 A, 60 V PNP Bipolar Power Transistor |
TO-204-2 |
1-07 |
|
Tray Foam |
100 |
$1.944 |
数据资料DataSheet下载
