BUL45D2:NPN Bipolar Power Transistor
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
技术特性
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
- Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
- Pb-Free Package is Available
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BUL45D2G |
Active |
|
NPN Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$0.6133 |
| BUL45D2 |
Last Shipments |
|
NPN Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
数据资料DataSheet下载
