MJ21195 16 A, 250 V, PNP Bipolar Power Transistor

The MJ21195 and MJ21196 utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.

技术特性
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available
封装图 MARKING DIAGRAM

MJ21195 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJ21195G Active Pb-free 16 A, 250 V, PNP Bipolar Power Transistor TO-204-2 1-07   Tray Foam 100 $2.0159
数据资料DataSheet下载
概述 版本信息 大小
MJ21195 数据资料DataSheet下载:pdf Rev.V2 2 页