MJE200: 5.0 A, 25 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
技术特性
- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc
hFE = 45 (Min) @ IC = 2.0 Adc
hFE = 10 (Min) @ IC = 5.0 Adc
- Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJE200G |
Active |
|
5.0 A, 25 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
$0.2333
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| MJE200 |
Last Shipments |
|
5.0 A, 25 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
|
数据资料DataSheet下载
