MJE5851:8.0 A, 350 V PNP Bipolar Power Transistor

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

技术特性
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

MJE5851封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE5851G Active
Pb-free
8.0 A, 350 V PNP Bipolar Power Transistor TO-220-3 221A-09 Tube 50 $2.0
MJE5851 Last Shipments 8.0 A, 350 V PNP Bipolar Power Transistor TO-220-3 221A-09 Tube 50  
数据资料DataSheet下载
概述 文档编号/大小 版本
8.0 A, 350 V PNP Bipolar Power Transistor MJE5851-D(417.0kB) 3