MJW21195:16 A, 250 V PNP Bipolar Power Transistor
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications
技术特性
- Total Harmonic Distortion Characterized
- High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 2.25 A, 80 V, 1 Second
- Pb-Free Packages are Available
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封装图 MARKING DIAGRAM
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJW21195G |
Active |
Pb-free |
16 A, 250 V PNP Bipolar Power Transistor |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$2.0
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| MJW21195 |
Last Shipments |
|
16 A, 250 V PNP Bipolar Power Transistor |
TO-247-3 |
340L-02 |
|
Tube |
30 |
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数据资料DataSheet下载
