MLD1N06CL:Single N-Channel Power MOSFET with Voltage Clamp

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent driver or other applications where a high in-rush current or a shorted load condition could occur. This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and Sensefet technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

技术特性
  • Pb−Free Package is Available
终端产品
  • Automobiles
应用
  • Fuel Injector Driver
  • Incandescent Lamp Driver
封装图 PACKAGE DIMENSIONS

MLD1N06CL封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MLD1N06CLT4G Active
Pb-free
Halide free
Single N-Channel Power MOSFET with Voltage Clamp DPAK-3 369C 1 Tape and Reel 2500 $0.5867
MLD1N06CLT4 Last Shipments
Single N-Channel Power MOSFET with Voltage Clamp DPAK-3 369C 1 Tape and Reel 2500  
数据资料DataSheet下载
概述 文档编号/大小 版本
Single N-Channel Power MOSFET with Voltage Clamp MLD1N06CL-D(417.0kB) 3