MLD1N06CL:Single N-Channel Power MOSFET with Voltage Clamp
The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent driver or other applications where a high in-rush current or a shorted load condition could occur. This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and Sensefet technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.
技术特性
- Pb−Free Package is Available
终端产品
应用
- Fuel Injector Driver
- Incandescent Lamp Driver
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
MLD1N06CLT4G |
Active |
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Single N-Channel Power MOSFET with Voltage Clamp |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.5867 |
MLD1N06CLT4 |
Last Shipments |
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Single N-Channel Power MOSFET with Voltage Clamp |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
|
数据资料DataSheet下载