NCP5111:Single Input Half-Bridge Power MOSFET or IGBT D
The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the High-side power switch.
技术特性
- High Voltage Range: Up to 600V
- dV/dt Immunity ±50 V/ns
- Gate Drive Supply Range from 10 V to 20 V
- High and Low Drive Outputs
- Output Source / Sink Current Capability 250 mA / 500 mA
- 3.3 V and 5 V Input Logic Compatible
- Up to Vcc Swing on Input Pins
- Matched Propagation Delays Between Both Channels
- One Input with Internal Fixed Dead Time (650 ns)
- Under Vcc LockOut (UVLO) for Both Channels
- Pin to Pin Compatible with Industry Standards
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应用
- Half Bridge Power Converters
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NCP5111DR2G |
Active |
|
Single Input Half-Bridge Power MOSFET or IGBT Driver |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.32 |
| NCP5111PG |
Active |
|
Single Input Half-Bridge Power MOSFET or IGBT Driver |
PDIP-8 |
626-05 |
1 |
Tube |
50 |
$0.768 |
数据资料DataSheet下载
