NTGD1100L: Small Signal MOSFET 8V 3.3A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF
技术特性
- Extremely Low RDS(on) Load Switch MOSFET
- Level Shift MOSFET is ESD Protected
- Low Profile, Small Footprint Package
- VIN Range 1.8 to 8.0 V
- ON/OFF Range 1.5 to 8.0 V
- ESD Rating of 2000 V
- These Devices are Pb−Free and are RoHS Compliant
应用
- Portable Electronic Equipment
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTGD1100LT1G |
Active |
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Small Signal MOSFET 8V 3.3A 55 mOhm Dual P-Channel TSOP6 with Level-Shift, Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift |
SC-74 |
318F-05 |
1 |
Tape and Reel |
3000 |
$0.18 |
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