TIG065E8:IGBT, N-Channel, 150 A, 400 V
TIG065E8 is an N-Channel, 150 A, 400 V, Insulated Gate Bipolar Transistor (IGBT) for Light-Controlling Flash Applications.
技术特性
- Low-saturation voltage
- Enhancement type
- Low voltage drive (2.5V)
- Built-in Gate-to-Emitter protection diode
- dV/dt guarantee
- Mounting Height 0.9mm, Mounting Area 8.12mm2
应用
- Light Controlling Flash Applications
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| TIG065E8-TL-H |
Active |
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IGBT, N-Channel, 150 A, 400 V |
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1 |
Tape and Reel |
3000 |
$0.4267 |
数据资料DataSheet下载
