FPD6836 0.25W Power Die
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx360μm Schottky barrier gate defined by high - resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
技术特性 Features
- 25.5dBm Output Power (P1dB)
- 10dB Power Gain at 12GHz
- 16.5dB Max Stable Gain at 12GHz
- 12dB Maximum Stable Gain at 24GHz
- 50% Power-Added Efficiency
- 8V Operation
应用领域 Applications
- Narrowband and Broadband High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio Transmitters
|
技术指标
| Frequency Range (Min) (MHz): |
1000 |
| Frequency Range (Max) (MHz): |
24000 |
| Gain (dB): |
16.5 |
| OP1dB (dBm): |
25.5 |
| VSUPPLY (V): |
8 |
| ISUPPLY (mA): |
55 |
| Package: |
Die |
订购信息 Ordering Information
- Full Pack (100) FPD6836-000
- Small Quantity (25) FPD6836-000SQ
- Sample Quantity (3) FPD6836-000S3
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD6836-000SQ |
25 EA |
25 EA |
Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe |
1+ |
$12.73 |
| FPD6836-000 |
100 EA |
100 EA |
Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe |
100+ |
$8.90 |
| |
|
|
|
750+ |
$6.19 |
