FPD750 0.5W Power pHEMT

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx750μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in the low-cost plastic SOT89 SOT343 and DFN packages.

技术特性 Features
  • 27.5dBm Linear Output Power at 12GHz
  • 11.5dB Power Gain at 12GHz
  • 14.5dB Max Stable Gain at 12GHz
  • 38dBm OIP3
  • 50% Power-Added Efficiency
应用领域 Applications
  • Narrowband and Broadband High-Performance Amplifiers
  • SATCOM Uplink Transmitters
  • PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
  • Medium-Haul Digital Radio Transmitters

 

技术指标
Frequency Range (Min) (MHz): 1000
Frequency Range (Max) (MHz): 20000
Gain (dB): 11.5
OP1dB (dBm): 27
OIP3 (dBm): 38
VSUPPLY (V): 8
ISUPPLY (mA): 115
Package: Die
订购信息 Ordering Information
  • Full Pack (100) FPD750-000
  • Small Quantity (25) FPD750-000SQ
  • Sample Quantity (3) FPD750-000S3
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD750-000SQ 25 EA 25 EA Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe 1+ $17.03
FPD750-000 100 EA 100 EA Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe 100+ $11.90
        750+ $8.28

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD750 数据资料DataSheet下载:FPD750 0.5W Power pHEMT 237 Rev A1 DS090609