FPD7612P70 Low Noise High Frequency Packaged pHEMT

The FPD7612P70 is a low parasitic surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimized for low noise high frequency applications.

技术特性 Features
  • 22dBm Output Power (P1dB)
  • 21dB Gain at 1.85GHz
  • 0.5dB Noise Figure at 1.85GHz
  • 30dB Output IP3 at 1.85GHz
  • 45% Power-Added Efficiency at 1.85GHz
  • Usable Gain to 24GHz
产品实物图
FPD7612P70 产品实物图
应用领域 Applications
  • Gain blocks and medium power stages
  • WiMax (2GHz to 11GHz)
  • WLAN 802.11a (5.8GHz)
  • Point-to-Point Radio (to 18GHz)
技术指标
Frequency Range (Min) (MHz): 2000
Frequency Range (Max) (MHz): 28000
Gain (dB): 17
NF (dB): 1.2
OP1dB (dBm): 20.5
VSUPPLY (V): 5
ISUPPLY (mA): 30
Package: Die
订购信息 Ordering Information
  • RoHS-Compliant Packaged pHEMT FPD7612P70
  • 2.0GHz Evaluation Board EB7612P70-AC
  • Reel of 1000 FPD7612P70
  • Reel of 100 FPD7612P70SR
  • Bag of 25 FPD7612P70SQ
  • Bag of 5 FPD7612P70SB
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD7612P70SQ 25 EA 25 EA Standard 25 Piece Bag Shipping From Greensboro 1+ $6.29
FPD7612P70SR 100 EA 100 EA Standard 100 Piece 7" Short Reel Shipping From Greensboro 100+ $4.40
FPD7612P70 1000 EA 1000 EA Standard 1000 Piece 13" Reel Shipping From Greensboro 750+ $3.06

 


应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD7612P70 数据资料DataSheet下载:FPD7612P70 Low Noise High Frequency Packaged pHEMT 403 Rev A1 DS090629