RFPA3026 2.2GHz to 2.7GHz 2W InGaP Amplifier

RFMD’s RFPA3026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 3.0GHz to 3.8GHz bands. It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount QFN package

技术特性 Features

P1dB = 33.6dBm at 5V
802.11g 54 Mb/s Class AB Performance
POUT = 26dBm at 2.5% EVM, VCC 5V, 570mA
POUT = 27dBm at 2.5% EVM, VCC 6V, 513mA
On-Chip Output Power Detector
Input Prematched to ~5Ω
Proprietary Low Thermal Resistance Package
Hand Solderable and Easy Rework
Power Up/Down control < 1μs

订购信息 Ordering Information

RFPA3026SQ Standard 25-piece bag
RFPA3026SR Standard 100-piece reel
RFPA3026 Standard 1000-piece reel
RFPA3026-EVB1 Evaluation Board

功能框图 Functional Block Diagram

技术指标

Frequency Range (Min) (MHz):	2200
Frequency Range (Max) (MHz):	2700
POUT (dBm):	26
EVM (%):	2.5
Gain (dB):	12
VSUPPLY (V):	5
ISUPPLY (mA):	580
Package:	DFN 6-Pin

应用领域 Applications

2.5GHz ISM Band Applications
PCS Communication Systems
Wireless LAN Systems
Commercial and Consumer Systems
Portable Battery Powered Equipment
Broadband Spread-Spectrum Systems

RFPA3026 产品实物图

应用技术支持与电子电路设计开发资源下载	大小(KB)	版本信息
RFPA3026 数据资料DataSheet下载：RFPA3026 2.2GHz to 2.7GHz 2W InGaP Amplifier	794	DS120110