RFSW2100D 75W GaN-on-SiC Reflective SPDT RF Switch  

The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFSW2100D is able to achieve low insertion loss and high isolation with better than 10dB return loss across a wide band from 30MHz to 6GHz with proper die attach and heat sinking. The RFSW2100D is an SPDT RF switch suitable for many applications with 75W CW input power compression capability under controlled conditions, VSWR (3:1) and 25°C TCASE as well as ~0.25dB insertion loss and ~40dB small signal isolation at 2GHz.

技术特性 Features
  • Broadband Operation 30MHz to 6000MHz
  • Advanced GaN HEMT Technology
  • 2GHz Typical Performance
    • Insertion Loss ~0.25dB
    • Isolation ~40dB
  • Small Form Factor: 1.1mm x 0.9mm
  • High Power Capability: P0.1dB of 75W at -60V VLOW
  • Designed to present 50Ω I/O
  • Hot Switching Capability
功能框图 Functional Block Diagram

RFSW2100D功能框图

订购信息 Ordering Information
  • RFSW2100D 75W GaN on SiC RF Switch
技术指标
Switch Type: SPDT
Frequency Range (Min) (MHz): 30
Frequency Range (Max) (MHz): 6000
Insertion Loss (dB): ~0.25
Isolation (dB): ~40
Form: Bare die
应用领域 Applications
  • Military Communication
  • Electronic Warfare
  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Civilian and Military Radar
  • General Purpose Broadband Amplifiers
  • Public Mobile Radios
  • Industrial, Scientific, and Medical
RFSW2100D 产品实物图

RFSW2100D  产品实物图


应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
RFSW2100D数据资料DataSheet下载:PDF 165 DS120620