RFSW2100D 75W GaN-on-SiC Reflective SPDT RF Switch

The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFSW2100D is able to achieve low insertion loss and high isolation with better than 10dB return loss across a wide band from 30MHz to 6GHz with proper die attach and heat sinking. The RFSW2100D is an SPDT RF switch suitable for many applications with 75W CW input power compression capability under controlled conditions, VSWR (3:1) and 25°C TCASE as well as ~0.25dB insertion loss and ~40dB small signal isolation at 2GHz.

技术特性 Features

Broadband Operation 30MHz to 6000MHz
Advanced GaN HEMT Technology
2GHz Typical Performance
- Insertion Loss ~0.25dB
- Isolation ~40dB
Small Form Factor: 1.1mm x 0.9mm
High Power Capability: P0.1dB of 75W at -60V VLOW
Designed to present 50Ω I/O
Hot Switching Capability

功能框图 Functional Block Diagram

订购信息 Ordering Information

RFSW2100D 75W GaN on SiC RF Switch

技术指标

Switch Type:	SPDT
Frequency Range (Min) (MHz):	30
Frequency Range (Max) (MHz):	6000
Insertion Loss (dB):	~0.25
Isolation (dB):	~40
Form:	Bare die

应用领域 Applications

Military Communication
Electronic Warfare
Commercial Wireless Infrastructure
Cellular and WiMAX Infrastructure
Civilian and Military Radar
General Purpose Broadband Amplifiers
Public Mobile Radios
Industrial, Scientific, and Medical

RFSW2100D 产品实物图

应用技术支持与电子电路设计开发资源下载	大小(KB)	版本信息
RFSW2100D数据资料DataSheet下载：PDF	165	DS120620