K7R641882M-SAMSUNG三星代理商BDTIC代理SRAM存储器 K7R641882M

K7R641882M

Part number 型号：K7R641882M

Density 存储容量：72M bit

Organization 结构：4Mx18

VDD 正电源输入：1.8(V)

Access Time-tCD 存取时间：0.45,0.45,0.50(ns)

Cycle time 周期时间：250,200,167(MHz)

I/O Voltage 输入输出电压：1.5,1.8(V)

Package 封装形式：165FBGA

K7R641882M 订购型号:

订购型号	Density	Organization	VDD(V)	Access Time-tCD(ns)	Cycle time(MHz)	I/O Voltage(V)	Package
K7R641882M-EC20	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EC200	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EC25	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EC250	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EI20	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EI200	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EI25	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-EI250	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC16	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC160	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC20	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC200	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC25	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FC250	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI16	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI160	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI20	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI200	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI25	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R641882M-FI250	64M	4Mx18	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA

K7R641882M 技术支持与电子电路设计开发资源下载

K7R641882M 数据手册DataSheet下载.pdf

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