AS165-59LF GaAs IC High-Isolation SPST Switch Positive Control 0.7–2.5 GHz

The AS165-59 SPST IC FET switch is absorptive on the input. The switch features high isolation and low insertion loss. Ideal building block for base station applications where synthesizer isolation is critical. Use in conjunction with the AS164-80 SPDT switch to meet GSM synthesizer switch isolation requirements.

技术特性
  • Single positive control voltage (0, 5 V)
  • Base station synthesizer switch
  • High isolation (45 dB @ 0.9, 1.9 GHz)
  • J1 port nonreflective
  • Miniature low-cost MSOP-8 plastic package
  • Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260 °C
    per JEDEC J-STD-020
订购信息 Ordering Information
  • AS165-59LF
AS165-59LF 引脚定义

AS165-59LF 引脚定义

应用技术支持与电子电路设计开发资源下载 版本信息 大小
AS165-59LF 数据资料DataSheet下载:pdf Rev.V2 2 页