DME_DMF_DMJ_Series Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips
SKYWORKS beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available up to, and including, the Ka-band. Unpackaged diodes are well suited for use in Microwave Integrated Circuits (MICs). The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications.
技术特性
应用领域 APPLICATION
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订购信息 Ordering Information
DME_DMF_DMJ_Series 实物图
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| DME_DMF_DMJ_Series 数据资料DataSheet下载:pdf | Rev.V2 | 2 页 |
