DSM8100-000 Mesa Beam-Lead PIN Diode

The DSM8100-000 silicon Mesa Beam-Lead PIN Diode is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers protect the diode junction to provide excellent reliability and stable electrical performance, especially when the diode is housed in a hermetically sealed assembly to further protect the junction from moisture. The DSM8100-000 is designed for microstrip or stripline circuits and for circuits requiring high isolation from a series-mounted diode such as broadband multithrow switches, phase shifters, limiters, attenuators and modulators.

技术特性

Low capacitance
Low resistance
Fast switching
Oxide-nitride passivated
Durable construction
Lead (Pb)-free, RoHS-compliant, and Green™

应用领域 APPLICATION

Designed for switching applications

订购信息 Ordering Information

DSM8100-000

DSM8100-000 实物图

应用技术支持与电子电路设计开发资源下载	版本信息	大小
DSM8100-000 数据资料DataSheet下载:pdf	Rev.V2	2 页