SKY67101-396LF 0.4-1.2 GHz High Linearity, Active Bias Low-Noise Amplifier

The SKY67101-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides excellent return loss, low noise, and high linearity performance. The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the ability to externally adjust supply current and gain. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. Pin 4 (VIN) should be connected to RFOUT/VDD through an external resistor to control the supply current. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. Pin 5 (FEEDBACK) is connected through an RC network to externally adjust the gain of the device without affecting the Noise Figure (NF) of the LNA. The SKY67101-396LF operates in the frequency range of 0.4 to 1.2 GHz with proper tuning. For higher frequency operation, the pin-compatible SKY67100-396LF should be used.

技术特性
  • Ultra Low Noise Figure: 0.57 dB @ 0.9 GHz
  • Input and output return loss > 18 dB @ 0.9 GHz
  • High OIP3 performance: +33.8 dBm @ 0.9 GHz
  • Adjustable supply current and gain
  • Temperature and process-stable active bias
  • Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)
订购信息 Ordering Information
SKY67101-396LF LNA  SKY67101-396LF  SKY67101-396LF-EVB
应用领域 APPLICATION
  • GSM, CDMA, WCDMA, and TD-SCDMA cellular infrastructure
  • Ultra low-noise systems
功能框图 Functional Block Diagram

SKY67101-396LF 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
SKY67101-396LF 数据资料DataSheet下载:pdf Rev.V2 2 页