Silicon_Schottky_Barrier Diodes: Packaged, Bondable Chips and Beam Leads
SKYWORKS packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available. Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates. Unmounted beam-lead diodes are especially well suited for use in Microwave Integrated Circuit (MIC) applications. Mounted beam-lead diodes can be easily used in MIC, stripline, or other such circuitry.
技术特性
应用领域 APPLICATION
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订购信息 Ordering Information
Silicon_Schottky_Barrier 实物图
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| Silicon_Schottky_Barrier 数据资料DataSheet下载:pdf | Rev.V2 | 2 页 |
