技术特性

• Breakdown voltage VBR = 8.2 V
• Unidirectional device
• High peak power dissipation: 500 W (8/20 μs waveform)
• ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge
• Low leakage current (< 0.5 μA @ 5 V) Benefits
  • High EOS and ESD protection level
  • High integration
  • Suitable for high density boards
• Complies with the following standards:
  • IEC 61000-4-2 level 4
    • ±15 kV (air discharge)
    • ±8 kV (contact discharge)
  • MIL STD 883G - Method 3015-7: class 3B
    • HBM (human body model): ≥8kV

应用领域

• Computers
• Printers
• Communication systems
• Cellular phone handsets and accessories
• Video equipment

Benefits

• High EOS and ESD protection level
• High integration
• Suitable for high density boards

Complies with the following standards:

• IEC 61000-4-2 level 4
  – ±15 kV (air discharge)
  – ±8 kV (contact discharge)
• MIL STD 883G - Method 3015-7: class 3B
  – HBM (human body model): ≥8kV

功能框图