M40Z111 5V或3V的NVRAM

The M40Z111/W NVRAM supervisor is a self-contained device which converts a standard low-power SRAM into a non-volatile memory.

A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition.

When an invalid VCC condition occurs, the conditioned chip enable (ECON) output is forced inactive to write-protect the stored data in the SRAM.

During a power failure, the SRAM is switched from the VCC pin to the lithium cell within the SNAPHAT? to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write protected until a valid power condition returns.

The 28-pin, 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process.

Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

M40Z111 订购型号
Ordering Model Package Battery Switchover(VSO) RST Threshold(VPFD) Packing Type
typ
V
M40Z111MH6E SO 28 BATTERY Yes 4.4 Tube
M40Z111MH6F SO 28 BATTERY Yes 4.4 Tape And Reel
M40Z111 技术特性:
M40Z111 技术支持与电子电路设计开发资源下载
  1. M40Z111 数据手册DataSheet下载.PDF
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