NAND型Flash快闪存储器

在非易失性内存产品行业,NAND闪存市场增长速度最快。由于各类多媒体系统产品对非易失性内存的容量、性能与成本的要求日益提高,NAND闪存的市场需求得到了强有力的推动。对于需要很大数据存储空间的应用,如数码相机和摄像机、个人数字助理(PDA)、MP3播放器和消费类数字设备(包括3G手机),以及移动式存储介质(如优盘和闪卡等),NAND闪存是理想的解决方案。

ST的NAND闪存系列面向范围不断扩展的诸多应用。这些应用往往要求不同的存储容量(从128Mbit到8Gbit及以上),不同的页面尺寸(528B/264W和2112B/1056W),并载有模块化接口。此外,它们还要求内存的尺寸不受存储容量影响,支持1.8伏和3伏输入电压,还有各种封装方式。

ST 意法 NAND型Flash快闪存储器订购型号:

Flash卡,CompactFlash (4)
Generic Part Number Package Memory Size Array Organization Block Size Page Size Supply Voltage(Vcc) Supply Voltage(Vcc) Operating Ambient Temperature(Ta) Operating Ambient Temperature(Ta) Read Cycle Time Block Erase Time Page Program Time Write/Erase Cycles
SMC01GBF Compact Flash Card Type1 - - - - - - - - - - - -
SMC02GBF Compact Flash Card Type1 - - - - - - - - - - - -
SMC256BF Compact Flash Card Type1 - - - - - - - - - - - -
SMC512BF Compact Flash Card Type1 - - - - - - - - - - - -


MCP, Flash NAND + LPSRAM (4)
Generic Part Number Package Memory Size Array Organization SRAM #1 Memory Size SRAM #1 Memory Organization Supply Voltage(Vcc) Supply Voltage(Vcc) Operating Ambient Temperature(Ta) Operating Ambient Temperature(Ta)
NAND01G-M LFBGA137 - - - - - - -30 85
NAND01G-N TFBGA149 - - - - - - -30 85
NAND256-M TFBGA149 - - - - - - -30 85
NAND512-M TFBGA107; TFBGA149 - - - - - - -25 85


NAND MLC 大型页面 (1)
Generic Part Number Package Status Memory Size Array Organization Block Size Page Size Supply Voltage(Vcc) Supply Voltage(Vcc) Operating Ambient Temperature(Ta) Operating Ambient Temperature(Ta) Read Cycle Time Block Erase Time Page Program Time Write/Erase Cycles Data Retention
NAND04GW3C2A TSOP-1 48 12x20 CU NRND 4096 512Mbx8 264 2112 2.7 3.6 0 70 60 1.5 800 10000 10


NAND SLC 大型页面 (8)
Generic Part Number Status Memory Size Array Organization Block Size Page Size Supply Voltage(Vcc) Supply Voltage(Vcc) Operating Ambient Temperature(Ta) Operating Ambient Temperature(Ta) Read Cycle Time Block Erase Time Page Program Time Write/Erase Cycles Data Retention
NAND01GR3B NRND 1024 128Mbx8 132 2112 1.7 1.95 -40 85 60 2 300 100000 10
NAND01GR3B2B Active 1024 128Mbx8 132 2112 1.7 1.95 -40 85 50 2 200 100000 10
NAND01GW3B Evaluation 1024 128Mbx8 132 2112 2.7 3.6 -40 85 50 2 300 100000 10
NAND01GW3B2B Active 1024 128Mbx8 132 2112 2.7 3.6 -40 85 30 2 200 100000 10
NAND02GR3B2C Evaluation 2048 256Mbx8 132 2112 1.7 1.95 -40 85 50 2 200 100000 10
NAND02GW3B2C Active 2048 256Mbx8 132 2112 2.7 3.6 -40 85 30 2 200 100000 10
NAND04GW3B2B Active 4096 512Mbx8 132 2112 2.7 3.6 -40 85 30 2 200 100000 10
NAND08GW3B2A Active 8192 1Gbx8 132 2112 2.7 3.6 -40 85 30 2 200 100000 10


NAND SLC 小型页面 (8)
Generic Part Number Package Memory Size Array Organization Block Size Page Size Supply Voltage(Vcc) Supply Voltage(Vcc) Operating Ambient Temperature(Ta) Operating Ambient Temperature(Ta) Read Cycle Time Block Erase Time Page Program Time Write/Erase Cycles Data Retention
NAND01GW3A2B-KGD TESTED UNSAWN WAFER STAT. V.I. 1024 128Mbx8 16 528 2.7 3.6 -40 85 50 2 200 100000 10
NAND128W3A TSOP-1 48 12x20 CU 128 16Mbx8 16 528 2.7 3.6 -40 85 50 2 200 100000 10
NAND256R3A VFBGA55 256 32Mbx8 16 528 1.7 1.95 -40 85 60 2 200 100000 10
NAND256W3A TSOP-1 48 12x20 CU; VFBGA55 256 32Mbx8 16 528 2.7 3.6 -40 85 50 2 200 100000 10
NAND512R3A VFBGA63 512 64Mbx8 16 528 1.7 1.95 -40 85 60 2 200 100000 10
NAND512R3A2C VFBGA63 512 64Mbx8 16 528 1.7 1.95 -40 85 50 2 200 100000 10
NAND512W3A TSOP-1 48 12x20 CU; VFBGA63 512 64Mbx8 16 528 2.7 3.6 -40 85 50 2 200 100000 10
NAND512W3A2C TSOP-1 48 12x20 CU; VFBGA63 512 64Mbx8 16 528 2.7 3.6 -40 85 30 2 200 100000 10
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