技术特性

• Triple diode array for power bus protection, switch protection and reverse blocking protection
• Flexible connection for NPN low side or PNP high side sensor configuration
• 6 V to 32 V supply voltage range
• Minimum breakdown voltage VBR: 36 V
• 8/20 μs 2A maximum clamping voltage: 46 V
• Direct sensor switch current: 300 mA
• Blocking diode drop forward voltage VF: 1 V at 300 mA
• Blocking diode maximum 10 ms square pulse current IFSM: 1 A
• Ambient temperature: -25 °C to +85 °C
• QFN3x3-6L 1 mm flat package: 3x3 mm
• Voltage surge: EN 60947-5-2 orIEC 61000-4-5 with RCC= 500 Ω: ±1 kV
• Electrostatic discharge ESD, IEC 61000-4-2:± 8 kV in contact, ± 15 kV in air
• Electrical transient immunity: IEC 61000-4-4: ±2 kV
• Benefits
  • Compliant for interface with logic input type 1, 2 and 3 IEC 61131-2 standard
  • Recommended to protect any 3-wire sensor compliant with EN 60947-5-2 standard
  • Highly compact with integrated power solution in SMD version

Benefits

• Compliant for interface with logic input type 1, 2 and 3 IEC 61131-2 standard
• Recommended to protect any 3-wire sensor compliant with EN 60947-5-2 standard
• Highly compact with integrated power solution in SMD version

应用领域

• Factory automation sensor application
• Proximity sensor interface protection
• Transient and surge voltage protection
• Compliant with sensor standard, EN60947-5-2

功能框图