STW56NM60ND N-channel 600 V, 0.047 Ohm typ., 50 A MDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
技术特性
- The worldwide best RDS(on)* area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
应用领域
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内部原理图
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STW56NM60ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STW56NM60ND |
Preview |
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1000 |
TO-247 |
Tube |
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STW56NM60ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STW56NM60ND :DS9172: N-channel 600 V, 0.047 Ω typ., 50 A FDmesh™ II Power MOSFET in TO-247 package |
1 |
411KB |
