SN54BCT2827C 具有三态输出的 10 位总线/MOS 存储器驱动器
SN54BCT2827C 描述
These 25-Ω octal buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
These buffers are capable of sinking 188-mA IOL, which facilitates switching 25-Ω transmission lines on the incident wave. The distributed VCC and GND pins minimize switching noise for more reliable system operation.
When the output-enable (1
and 2) inputs are low, the device transmits data from the A inputs to the Y outputs. When 1 and 2 are high, the outputs are in the high-impedance state.
The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C
| SN54BCT2827C | |
| Voltage Nodes(V) | 5 |
| Vcc range(V) | 4.5 to 5.5 |
| Logic | True |
| Input Level | TTL |
| Output Level | TTL |
| Output Drive(mA) | -1/12 |
| No. of Outputs | 10 |
| tpd max(ns) | 7.8 |
| Static Current | 40 |
| Rating | Catalog |
| Technology Family | BCT |
SN54BCT2827C 特性
- BiCMOS Design Substantially Reduces ICCZ
- Output Ports Have Equivalent 25-
Resistors; No External Resistors Are Required
- Specifically Designed to Drive MOS DRAMs
- 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
- Flow-Through Architecture Optimizes PCB Layout
- Power-Up High-Impedance State
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
SN54BCT2827C 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| SN54BCT2827CDW | ACTIVE | 0 to 70 | 3.60 | 1ku | SOIC(DW) | 24 | 25 | TUBE | BCT2827C |
| SN54BCT2827CDWE4 | ACTIVE | 0 to 70 | 3.60 | 1ku | SOIC(DW) | 24 | 25 | TUBE | BCT2827C |
| SN54BCT2827CDWG4 | ACTIVE | 0 to 70 | 3.60 | 1ku | SOIC(DW) | 24 | 25 | TUBE | BCT2827C |
SN54BCT2827C 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| SN54BCT2827CDW | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54BCT2827CDW | SN54BCT2827CDW |
| SN54BCT2827CDWE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54BCT2827CDWE4 | SN54BCT2827CDWE4 |
| SN54BCT2827CDWG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54BCT2827CDWG4 | SN54BCT2827CDWG4 |
SN54BCT2827C 应用技术支持与电子电路设计开发资源下载
- TI 德州仪器缓冲器、驱动器/收发器产品选型与价格 . xls
- CMOS 非缓冲反向器在振荡器电路中的使用 (PDF 951 KB)
- Semiconductor Packing Methodology (PDF 3005 KB)
- 逻辑产品选择指南 2006/2007 （修订版 Z）(4462KB)
- 标准线性和逻辑产品 5 分钟指南 (786KB)
- 了解和解释标准逻辑数据表
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
