首页 > TI 德州仪器 > 逻辑 > 信号开关

SN74CBT3306C 具有 -2V 下冲保护的双路 FET 总线开关

The SN74CBT3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports

	SN74CBT3306C
Voltage Nodes(V)	5
Vcc range(V)	4.0 to 5.5
No. of Bits	2
Input Level	TTL
ron(max)(ohms)	12
Static Current	0.003
tpd max(ns)	0.15
Rating	Catalog
Technology Family	CBT-C

SN74CBT3306C 特性

• Undershoot Protection for Off-Isolation on A and B Ports Up to –2 V
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
• Data and Control Inputs Provide Undershoot Clamps Diodes
• Low Power Consumption (ICC = 3 µA Max)
• VCC Operating Range From 4 V to 5.5 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating

SN74CBT3306C 芯片订购指南

器件	状态	温度	价格	封装 | 引脚	封装数量 | 封装载体	丝印标记
SN74CBT3306CD	ACTIVE	-40 to 85	0.37 | 1ku	SOIC (D) | 8	50 | TUBE
SN74CBT3306CDE4	ACTIVE	-40 to 85	0.37 | 1ku	SOIC (D) | 8	50 | TUBE
SN74CBT3306CDG4	ACTIVE	-40 to 85	0.37 | 1ku	SOIC (D) | 8	50 | TUBE
SN74CBT3306CDR	ACTIVE	-40 to 85	0.31 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
SN74CBT3306CDRE4	ACTIVE	-40 to 85	0.31 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
SN74CBT3306CDRG4	ACTIVE	-40 to 85	0.31 | 1ku	SOIC (D) | 8	2500 | LARGE T&R

SN74CBT3306C 质量与无铅数据

器件	环保计划*	铅/焊球涂层	MSL 等级/回流焊峰	环保信息与无铅 (Pb-free)	DPPM / MTBF / FIT 率
SN74CBT3306CD	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CD	SN74CBT3306CD
SN74CBT3306CDE4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CDE4	SN74CBT3306CDE4
SN74CBT3306CDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CDG4	SN74CBT3306CDG4
SN74CBT3306CDR	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CDR	SN74CBT3306CDR
SN74CBT3306CDRE4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CDRE4	SN74CBT3306CDRE4
SN74CBT3306CDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	SN74CBT3306CDRG4	SN74CBT3306CDRG4

SN74CBT3306C 应用技术支持与电子电路设计开发资源下载

1. SN74CBT3306C 数据资料 dataSheet 下载.PDF
2. TI 德州仪器信号开关产品选型与价格 . xls
3. Logic Guide 2009 (PDF 4263 KB)
4. 防止模拟开关的额外功耗 (PDF 392 KB) (PDF 1305 KB)
5. Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
6. TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
7. Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
8. CMOS Power Consumption and CPD Calculation (PDF 89 KB)
9. Designing With Logic (PDF 186 KB)
10. Live Insertion (PDF 150 KB)
11. Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
12. Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
13. HiRel Unitrode Power Management Brochure (PDF 206 KB)
14. LOGIC Pocket Data Book (PDF 6001 KB)
15. HiRel Unitrode Power Management Brochure (PDF 206 KB)
16. Logic Cross-Reference (PDF 2938 KB)