BQ2205LY 用于双 SRAM 内存组的电池备份监控器

BQ2205LY
No. of Supervisors 1  
Vit1(Typ)(V) 2.9  
Reset Threshold Accuracy(%) 1.7  
IDD(Typ)(uA) 210  
Pin/Package 16TSSOP  
Rating Catalog
BQ2205LY 描述

The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory. A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM. Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system

BQ2205LY 特性
BQ2205LY 芯片订购指南
器件 状态 温度 (oC) 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
BQ2205LYPW ACTIVE -20 to 70 2.10 | 1ku TSSOP (PW) | 16 90 | TUBE 2205Y
BQ2205LYPWG4 ACTIVE -20 to 70 2.10 | 1ku TSSOP (PW) | 16 90 | TUBE 2205Y
BQ2205LYPWR ACTIVE -20 to 70 1.75 | 1ku TSSOP (PW) | 16 2000 | LARGE T&R 2205Y
BQ2205LYPWRG4 ACTIVE -20 to 70 1.75 | 1ku TSSOP (PW) | 16 2000 | LARGE T&R 2205Y
BQ2205LY 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
BQ2205LYPW Green (RoHS & no Sb/Br)  CU NIPDAU Level-1-260C-UNLIM BQ2205LYPW BQ2205LYPW
BQ2205LYPWG4 Green (RoHS & no Sb/Br)  CU NIPDAU Level-1-260C-UNLIM BQ2205LYPWG4 BQ2205LYPWG4
BQ2205LYPWR Green (RoHS & no Sb/Br)  CU NIPDAU Level-1-260C-UNLIM BQ2205LYPWR BQ2205LYPWR
BQ2205LYPWRG4 Green (RoHS & no Sb/Br)  CU NIPDAU Level-1-260C-UNLIM BQ2205LYPWRG4 BQ2205LYPWRG4
BQ2205LY 应用技术支持与电子电路设计开发资源下载
  1. BQ2205LY 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器监控电路(电压监控器)产品选型与价格 . xls