CD4508B CMOS 二路 4 位锁存器
CD4508B dual 4-bit latch contains two identical 4-bit latches with separate STROBE, RESET, and OUTPUT DISABLE control. With the STROBE line in the high state, the data on the "D" inputs appear at the corresponding "Q" outputs provided the DISABLE line is in the low state. Changing the STROBE line to the low state locks the data into the latch. A high on the reset line forces the outputs to a low level regardless of the state of the STROBE input. The outputs are forced to the high-impedance state for bus line applications by a high level on the DISABLE input.
The CD4508B types are supplied in 24-lead hermetic dual-in-line ceramic packages (F3A suffix), 24-lead dual-in-line plastic packages (E suffix), 24-lead small-outline packages (M, M96, and NSR suffixes), and 24-lead thin shrink small-outline packages (PW and PWR suffixes).
|
CD4508B |
| Voltage Nodes(V) |
5, 10, 15 |
| Rating |
Military |
| Technology Family |
CD4000 |
CD4508B 特性
- Two independent 4-bit latches
- Individual master reset for each 4-bit latch
- 3-state outputs with high-impedance state for bus line applications
- Medium-speed operation: tPHL = tPLH = 70 ns (typ.) at VDD = 10 V and CL = 50 pF
- 100% tested for quiescent current at 20 V
- 5-V, 10-V, and 15-V parametric ratings
- Standardized, symmetrical output characteristics
- Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C
- Noise margin (full package-temperature range) =
1 V at VDD = 5 V
2 V at VDD = 10 V
2.5 V at VDD = 15 V
- Meets all requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of ’B’ Series CMOS Devices"
- Applications:
- Buffer storage
- Holding registers
- Data storage and multiplexing
CD4508B 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| CD4508BE |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
PDIP (N) | 24 |
15 | TUBE |
CD4508BE |
| CD4508BEE4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
PDIP (N) | 24 |
15 | TUBE |
CD4508BE |
| CD4508BM |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SOIC (DW) | 24 |
25 | TUBE |
CD4508BM |
| CD4508BM96 |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
SOIC (DW) | 24 |
2000 | LARGE T&R |
CD4508BM |
| CD4508BM96E4 |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
SOIC (DW) | 24 |
2000 | LARGE T&R |
CD4508BM |
| CD4508BM96G4 |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
SOIC (DW) | 24 |
2000 | LARGE T&R |
CD4508BM |
| CD4508BME4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SOIC (DW) | 24 |
25 | TUBE |
CD4508BM |
| CD4508BMG4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SOIC (DW) | 24 |
25 | TUBE |
CD4508BM |
| CD4508BNSR |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SO (NS) | 24 |
2000 | LARGE T&R |
CD4508B |
| CD4508BNSRE4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SO (NS) | 24 |
2000 | LARGE T&R |
CD4508B |
| CD4508BNSRG4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
SO (NS) | 24 |
2000 | LARGE T&R |
CD4508B |
| CD4508BPW |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
TSSOP (PW) | 24 |
60 | TUBE |
CM508B |
| CD4508BPWE4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
TSSOP (PW) | 24 |
60 | TUBE |
CM508B |
| CD4508BPWG4 |
ACTIVE |
-55 to 125 |
1.25 | 1ku |
TSSOP (PW) | 24 |
60 | TUBE |
CM508B |
| CD4508BPWR |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
TSSOP (PW) | 24 |
2000 | LARGE T&R |
CM508B |
| CD4508BPWRE4 |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
TSSOP (PW) | 24 |
2000 | LARGE T&R |
CM508B |
| CD4508BPWRG4 |
ACTIVE |
-55 to 125 |
1.20 | 1ku |
TSSOP (PW) | 24 |
2000 | LARGE T&R |
CM508B |
CD4508B 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| CD4508BE |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
CD4508BE |
CD4508BE |
| CD4508BEE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
CD4508BEE4 |
CD4508BEE4 |
| CD4508BM |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BM |
CD4508BM |
| CD4508BM96 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BM96 |
CD4508BM96 |
| CD4508BM96E4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BM96E4 |
CD4508BM96E4 |
| CD4508BM96G4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BM96G4 |
CD4508BM96G4 |
| CD4508BME4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BME4 |
CD4508BME4 |
| CD4508BMG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BMG4 |
CD4508BMG4 |
| CD4508BNSR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BNSR |
CD4508BNSR |
| CD4508BNSRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BNSRE4 |
CD4508BNSRE4 |
| CD4508BNSRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BNSRG4 |
CD4508BNSRG4 |
| CD4508BPW |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPW |
CD4508BPW |
| CD4508BPWE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPWE4 |
CD4508BPWE4 |
| CD4508BPWG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPWG4 |
CD4508BPWG4 |
| CD4508BPWR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPWR |
CD4508BPWR |
| CD4508BPWRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPWRE4 |
CD4508BPWRE4 |
| CD4508BPWRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD4508BPWRG4 |
CD4508BPWRG4 |
CD4508B 应用技术支持与电子电路设计开发资源下载
- CD4508B 数据资料 dataSheet 下载.PDF
- TI 德州仪器触发器/锁存器/寄存器产品选型与价格 . xls
- Shelf-Life Evaluation of Lead-Free Component Finishes (PDF 1305 KB)
- Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
- TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
- Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
- CMOS Power Consumption and CPD Calculation (PDF 89 KB)
- Designing With Logic (PDF 186 KB)
- Live Insertion (PDF 150 KB)
- Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
