LF412 精密 JFET 输入运算放大器
This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage and a specified maximum input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents.
The LF412C can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits.
The LF412C is characterized for operation from 0°C to 70°C
| LF411 | LF412 | |
| Iq per channel(Max)(mA) | 3.4 | 3.4 |
| VIO (25 deg C)(Max)(mV) | 2 | 3 |
| CMRR(Min)(dB) | 70 | 70 |
| Vn at 1kHz(Typ)(nV/rtHz) | 18 | 18 |
| IIB(Max)(pA) | 200 | 200 |
| Slew Rate(Min)(V/us) | 8 | 8 |
| Slew Rate(Typ)(V/us) | 13 | 13 |
| GBW(Typ)(MHz) | 3 | 3 |
| Spec'd at Vs(V) | +/-15 | +/-15 |
| Vs(Min)(V) | 7 | 7 |
| Vs(Max)(V) | 36 | 36 |
| Pin/Package | 8PDIP, 8SOIC | 8PDIP, 8SOIC |
| Open Loop Gain(Min)(dB) | 88 | 88 |
| Offset Drift(Typ)(uV/C) | 10 | 10 |
| IQ Per Amp (+/-)(Max)(mA) | 3.4 | 3.4 |
| Offset Voltage (+/-)(Max)(mV) | 2 | 3 |
| Number of Channels | 1 | 2 |
| Approx. Price (US$) | 0.70 | 1ku | 0.70 | 1ku |
| Operating Temperature Range(C) | 0 to 70 | 0 to 70 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 7 | 7 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 36 | 36 |
LF412 特性
- Low Input Bias Current, 50 pA Typ
- Low Input Noise Current, 0.01 pA/ Hz\ Typ
- Low Supply Current, 2 mA Typ
- High Input impedance, 1012 Typ
- Low Total Harmonic Distortion
- Low 1/f Noise Corner, 50 Hz Typ
- Package Options Include Plastic Small-Outline (D) and Standard (P) DIPs
LF412 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| LF412CD | ACTIVE | 0 to 70 | 0.85 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LF412CDE4 | ACTIVE | 0 to 70 | 0.85 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LF412CDG4 | ACTIVE | 0 to 70 | 0.85 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LF412CDR | ACTIVE | 0 to 70 | 0.70 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LF412CDRE4 | ACTIVE | 0 to 70 | 0.70 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LF412CDRG4 | ACTIVE | 0 to 70 | 0.70 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LF412CP | ACTIVE | 0 to 70 | 0.75 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| LF412CPE4 | ACTIVE | 0 to 70 | 0.75 | 1ku | PDIP (P) | 8 | 50 | TUBE |
LF412 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| LF412CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CD | LF412CD |
| LF412CDE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CDE4 | LF412CDE4 |
| LF412CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CDG4 | LF412CDG4 |
| LF412CDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CDR | LF412CDR |
| LF412CDRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CDRE4 | LF412CDRE4 |
| LF412CDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LF412CDRG4 | LF412CDRG4 |
| LF412CP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | LF412CP | LF412CP |
| LF412CPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | LF412CPE4 | LF412CPE4 |
LF412 应用技术支持与电子电路设计开发资源下载
- LF412 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
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- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
