LM258 双路运算放大器

These devices consist of two independent, high-gain, frequency-compensated operational amplifiers designed to operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 32 V (3 V to 26 V for the LM2904), and VCC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supply voltage.

Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example, these devices can be operated directly from the standard 5-V supply used in digital systems and easily provide the required interface electronics without additional ±5-V supplies


LM158 LM258 LM358
Iq per channel(Max)(mA)   0.6   0.6  
Vn at 1kHz(Typ)(nV/rtHz)   40   40  
IIB(Max)(pA) 300000   150000   250000  
Slew Rate(Typ)(V/us)   0.3   0.3  
GBW(Typ)(MHz)   0.7   0.7  
Spec'd at Vs(V)   5   5  
Vs(Min)(V)   3   3  
Vs(Max)(V)   32   32  
VIO (Full Range)(Max)(mV) 7   7   9  
Number of Channels 2   2   2  
Pin/Package 20LCCC, 8CDIP   8MSOP, 8PDIP, 8SOIC   8MSOP, 8PDIP, 8SO, 8SOIC, 8TSSOP  
Open Loop Gain(Min)(dB)     88  
Offset Drift(Typ)(uV/C) 7   7   7  
Offset Voltage (+/-)(Max)(mV)   7   9  
Available Channels D   D   D  
Operating Temperature Range(C) -55 to 125   -25 to 85   0 to 70  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10)   3   3  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10)   32   32  
VIO (25 deg C)(Max)(mV) 5   5   7  
CMRR(Min)(dB) 70   70   65
LM258 特性
LM258 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
LM258D ACTIVE -25 to 85 0.13 | 1ku SOIC (D) | 8 75 | TUBE  
LM258DE4 ACTIVE -25 to 85 0.13 | 1ku SOIC (D) | 8 75 | TUBE  
LM258DG4 ACTIVE -25 to 85 0.13 | 1ku SOIC (D) | 8 75 | TUBE  
LM258DGKR ACTIVE -25 to 85 0.11 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LM258DGKRG4 ACTIVE -25 to 85 0.11 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LM258DR ACTIVE -25 to 85 0.11 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM258DRE4 ACTIVE -25 to 85   SOIC (D) | 8    
LM258DRG3 ACTIVE -25 to 85 0.11 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM258DRG4 ACTIVE -25 to 85 0.11 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM258P ACTIVE -25 to 85 0.11 | 1ku PDIP (P) | 8 50 | TUBE  
LM258PE4 ACTIVE -25 to 85 0.11 | 1ku PDIP (P) | 8 50 | TUBE  
LM258 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
LM258D Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258D LM258D
LM258DE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DE4 LM258DE4
LM258DG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DG4 LM258DG4
LM258DGKR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DGKR LM258DGKR
LM258DGKRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DGKRG4 LM258DGKRG4
LM258DR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DR LM258DR
LM258DRE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DRE4 LM258DRE4
LM258DRG3 Green (RoHS & no Sb/Br)  CU SN  Level-1-260C-UNLIM LM258DRG3 LM258DRG3
LM258DRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM258DRG4 LM258DRG4
LM258P Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type LM258P LM258P
LM258PE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type LM258PE4 LM258PE4
LM258 应用技术支持与电子电路设计开发资源下载
  1. LM258 数据资料 dataSheet 下载.PDF
  2. TI 德州仪标准线性放大器产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)