LMV822 双路、低压、低功耗 RRO
The LMV821 single, LMV822 dual, and LMV824 quad devices are low-voltage (2.5 V to 5.5 V), low-power commodity operational amplifiers. Electrical characteristics are very similar to the LMV3xx operational amplifiers (low supply current, rail-to-rail outputs, input common-mode range that includes ground). However, the LMV8xx devices offer a higher bandwidth (5.5 MHz typical) and faster slew rate (1.9 V/µs typical).
The LMV8xx devices are cost-effective solutions for applications requiring low-voltage/low-power operation and space-saving considerations. The LMV822 is available in the ultra-small DCK package, which is approximately half the size of SOT-23-5. The DCK package saves space on printed circuit boards and enables the design of small portable electronic devices (cordless and cellular phones, laptops, PDAs, PCMIA). It also allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity.
The LMV8xx devices are characterized for operation from -40°C to 85°C. The LMV8xxI devices are characterized for operation from -40°C to 125°C
| LMV822 | |
| Iq per channel(Max)(mA) | 0.4 |
| VIO (25 deg C)(Max)(mV) | 3.5 |
| CMRR(Min)(dB) | 70 |
| Vn at 1kHz(Typ)(nV/rtHz) | 45 |
| Rail-Rail | Out |
| IIB(Max)(pA) | 100000 |
| Slew Rate(Typ)(V/us) | 1.7 |
| GBW(Typ)(MHz) | 5 |
| Spec'd at Vs(V) | 2.7 |
| VIO (Full Range)(Max)(mV) | 4 |
| Vs(Min)(V) | 2.7 |
| Vs(Max)(V) | 5.5 |
| Pin/Package | 8MSOP, 8SOIC |
| Vio(Max)(mV) | 4 |
| Supply Voltage 5(V) | Yes |
| Open Loop Gain(Min)(dB) | 90 |
| Offset Drift(Typ)(uV/C) | 1 |
| IQ Per Amp (+/-)(Max)(mA) | 0.4 |
| Offset Voltage (+/-)(Max)(mV) | 4 |
| Number of Channels | 2 |
| Approx. Price (US$) | 0.39 | 1ku |
| Operating Temperature Range(C) | -40 to 125,-40 to 85 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 2.7 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 5.5 |
LMV822 特性
- 2.5-V, 2.7-V, and 5-V Performance
- -40°C to 125°C Operation
- No Crossover Distortion
- Low Supply Current at VCC+ = 5 V:
- LMV822. . .0.3 mA Typ
- LMV822. . .0.5 mA Typ
- LMV824. . .1 mA Typ
- Rail-to-Rail Output Swing
- Gain Bandwidth of 5.5 MHz Typ at 5 V
- Slew Rate of 1.9 V/µs Typ at 5 V
LMV822 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| LMV822D | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822DE4 | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822DG4 | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822DGKR | ACTIVE | -40 to 85 | 0.39 | 1ku | MSOP (DGK) | 8 | 2500 | LARGE T&R | |
| LMV822DGKRG4 | ACTIVE | -40 to 85 | 0.39 | 1ku | MSOP (DGK) | 8 | 2500 | LARGE T&R | |
| LMV822DR | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LMV822DRE4 | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LMV822DRG4 | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LMV822ID | ACTIVE | -40 to 125 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822IDE4 | ACTIVE | -40 to 125 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822IDG4 | ACTIVE | -40 to 125 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| LMV822IDGKR | ACTIVE | -40 to 125 | 0.39 | 1ku | MSOP (DGK) | 8 | 2500 | LARGE T&R | |
| LMV822IDGKRG4 | ACTIVE | -40 to 125 | 0.39 | 1ku | MSOP (DGK) | 8 | 2500 | LARGE T&R | |
| LMV822IDR | ACTIVE | -40 to 125 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LMV822IDRE4 | ACTIVE | -40 to 125 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| LMV822IDRG4 | ACTIVE | -40 to 125 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R |
LMV822 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| LMV822D | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822D | LMV822D |
| LMV822DE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DE4 | LMV822DE4 |
| LMV822DG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DG4 | LMV822DG4 |
| LMV822DGKR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DGKR | LMV822DGKR |
| LMV822DGKRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DGKRG4 | LMV822DGKRG4 |
| LMV822DR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DR | LMV822DR |
| LMV822DRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DRE4 | LMV822DRE4 |
| LMV822DRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822DRG4 | LMV822DRG4 |
| LMV822ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822ID | LMV822ID |
| LMV822IDE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDE4 | LMV822IDE4 |
| LMV822IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDG4 | LMV822IDG4 |
| LMV822IDGKR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDGKR | LMV822IDGKR |
| LMV822IDGKRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDGKRG4 | LMV822IDGKRG4 |
| LMV822IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDR | LMV822IDR |
| LMV822IDRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDRE4 | LMV822IDRE4 |
| LMV822IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | LMV822IDRG4 | LMV822IDRG4 |
LMV822 应用技术支持与电子电路设计开发资源下载
- LMV822 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
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- 运算放大器的单电源操作 (PDF 2174 KB)
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- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
