TL081B JFET 输入运算放大器
The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previously developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Offset adjustment and external compensation options are available within the TL08x family.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The Q-suffix devices are characterized for operation from -40°C to 125°C
|
TL081B |
| Iq per channel(Max)(mA) |
2.8 |
| VIO (25 deg C)(Max)(mV) |
3 |
| CMRR(Min)(dB) |
75 |
| Vn at 1kHz(Typ)(nV/rtHz) |
18 |
| IIB(Max)(pA) |
200 |
| Slew Rate(Min)(V/us) |
8 |
| Slew Rate(Typ)(V/us) |
13 |
| GBW(Typ)(MHz) |
3 |
| Spec'd at Vs(V) |
+/-15 |
| VIO (Full Range)(Max)(mV) |
5 |
| Vs(Min)(V) |
7 |
| Vs(Max)(V) |
36 |
| Pin/Package |
8PDIP, 8SOIC |
| Vio(Max)(mV) |
5 |
| Supply Voltage 5(V) |
No |
| Open Loop Gain(Min)(dB) |
94 |
| Offset Drift(Typ)(uV/C) |
18 |
| IQ Per Amp (+/-)(Max)(mA) |
2.8 |
| Offset Voltage (+/-)(Max)(mV) |
5 |
| Number of Channels |
1 |
| Approx. Price (US$) |
0.45 | 1ku |
| Operating Temperature Range(C) |
0 to 70 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
7 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
36 |
TL081B 特性
- Low Power Consumption
- Wide Common-Mode and Differential Voltage Ranges
- Low Input Bias and Offset Currents
- Output Short-Circuit Protection
- Low Total Harmonic Distortion...0.003% Typ
- High Input Impedance...JFET-Input Stage
- Latch-Up-Free Operation
- High Slew Rate...13 V/µs Typ
- Common-Mode Input Voltage Range Includes VCC+
TL081B 芯片订购指南
| 器件 |
状态 |
温度 |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| TL081BCD |
ACTIVE |
0 to 70 |
0.55 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| TL081BCDE4 |
ACTIVE |
0 to 70 |
0.55 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| TL081BCDG4 |
ACTIVE |
0 to 70 |
0.55 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| TL081BCDR |
ACTIVE |
0 to 70 |
0.45 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| TL081BCDRE4 |
ACTIVE |
0 to 70 |
0.45 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| TL081BCDRG4 |
ACTIVE |
0 to 70 |
0.45 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| TL081BCP |
ACTIVE |
0 to 70 |
0.60 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
| TL081BCPE4 |
ACTIVE |
0 to 70 |
0.60 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
TL081B 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| TL081BCD |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCD |
TL081BCD |
| TL081BCDE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCDE4 |
TL081BCDE4 |
| TL081BCDG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCDG4 |
TL081BCDG4 |
| TL081BCDR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCDR |
TL081BCDR |
| TL081BCDRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCDRE4 |
TL081BCDRE4 |
| TL081BCDRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL081BCDRG4 |
TL081BCDRG4 |
| TL081BCP |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TL081BCP |
TL081BCP |
| TL081BCPE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TL081BCPE4 |
TL081BCPE4 |
TL081B 应用技术支持与电子电路设计开发资源下载
- TL081B 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
