TLC081 单路宽带高输出驱动单电源运算放大器

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD™ packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both


TLC080 TLC081 TLC082 TLC083 TLC084 TLC085
Number of Channels 1   1   2   2   4   4  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.5   4.5   4.5   4.5   4.5   4.5  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16   16   16   16   16   16  
Iq per channel(Max)(mA) 2.5   2.5   2.5   2.5   2.5   2.5  
GBW(Typ)(MHz) 10   10   10   10   10   10  
Slew Rate(Typ)(V/us) 16   16   16   16   16   16  
VIO (25 deg C)(Max)(mV) 1.9   1.9   1.9   1.9   1.9   1.9  
Offset Drift(Typ)(uV/C) 1.2   1.2   1.2   1.2   1.2   1.2  
IIB(Max)(pA) 50   50   50   50   50   50  
CMRR(Min)(dB) 100   80   80   80   80   80  
Vn at 1kHz(Typ)(nV/rtHz) 8.5   8.5   8.5   8.5   8.5   8.5  
Rating Catalog   Catalog   Catalog   Catalog   Catalog   Catalog  
Pin/Package 8MSOP-PowerPAD, 8PDIP, 8SOIC   8MSOP-PowerPAD, 8PDIP, 8SOIC   8MSOP-PowerPAD, 8PDIP, 8SOIC   10MSOP-PowerPAD, 14PDIP, 14SOIC   14PDIP, 14SOIC, 20HTSSOP   16PDIP, 16SOIC, 20HTSSOP  
Operating Temperature Range(C) -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   0 to 70  
Approx. Price (US$) 0.65 | 1ku   0.45 | 1ku   0.70 | 1ku   0.95 | 1ku   0.95 | 1ku   1.30 | 1ku
TLC081 特性
TLC081 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC081CD ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081CDG4 ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081CDGN ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC081CDGNG4 ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC081CDGNR ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081CDGNRG4 ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081CDR ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081CDRG4 ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081CP ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081CPE4 ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081ID ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081IDG4 ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081IDGNR ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081IDGNRG4 ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081IDR ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081IDRG4 ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081IP ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081IPE4 ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC081CD Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CD TLC081CD
TLC081CDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDG4 TLC081CDG4
TLC081CDGN Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDGN TLC081CDGN
TLC081CDGNG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDGNG4 TLC081CDGNG4
TLC081CDGNR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDGNR TLC081CDGNR
TLC081CDGNRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDGNRG4 TLC081CDGNRG4
TLC081CDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDR TLC081CDR
TLC081CDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081CDRG4 TLC081CDRG4
TLC081CP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC081CP TLC081CP
TLC081CPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC081CPE4 TLC081CPE4
TLC081ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081ID TLC081ID
TLC081IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081IDG4 TLC081IDG4
TLC081IDGNR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081IDGNR TLC081IDGNR
TLC081IDGNRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081IDGNRG4 TLC081IDGNRG4
TLC081IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081IDR TLC081IDR
TLC081IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC081IDRG4 TLC081IDRG4
TLC081IP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC081IP TLC081IP
TLC081IPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC081IPE4 TLC081IPE4
TLC081 应用技术支持与电子电路设计开发资源下载
  1. TLC081 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)