TLC277 二路精密单电源运算放大器

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV).


TLC277
Number of Channels 2  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 3  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16  
Iq per channel(Max)(mA) 1.6  
GBW(Typ)(MHz) 1.7  
Slew Rate(Typ)(V/us) 3.6  
VIO (25 deg C)(Max)(mV) 0.5  
Offset Drift(Typ)(uV/C) 1.8  
IIB(Max)(pA) 600  
CMRR(Min)(dB) 65  
Vn at 1kHz(Typ)(nV/rtHz) 25  
Rating Military  
Pin/Package 8PDIP, 8SO, 8SOIC  
Approx. Price (US$) 0.75 | 1ku
TLC277 特性
TLC277 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC277CD ACTIVE   0.90 | 1ku SOIC (D) | 8 75 | TUBE  
TLC277CDG4 ACTIVE   0.90 | 1ku SOIC (D) | 8 75 | TUBE  
TLC277CDR ACTIVE   0.75 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC277CDRG4 ACTIVE   0.75 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC277CP ACTIVE   0.75 | 1ku PDIP (P) | 8 50 | TUBE  
TLC277CPE4 ACTIVE   0.75 | 1ku PDIP (P) | 8 50 | TUBE  
TLC277CPSR ACTIVE   0.75 | 1ku SO (PS) | 8 2000 | LARGE T&R  
TLC277CPSRG4 ACTIVE   0.75 | 1ku SO (PS) | 8 2000 | LARGE T&R  
TLC277ID ACTIVE   0.95 | 1ku SOIC (D) | 8 75 | TUBE  
TLC277IDG4 ACTIVE   0.95 | 1ku SOIC (D) | 8 75 | TUBE  
TLC277IDR ACTIVE   0.80 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC277IDRG4 ACTIVE   0.80 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC277IP ACTIVE   0.80 | 1ku PDIP (P) | 8 50 | TUBE  
TLC277IPE4 ACTIVE   0.80 | 1ku PDIP (P) | 8 50 | TUBE  
TLC277 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC277CD Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CD TLC277CD
TLC277CDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CDG4 TLC277CDG4
TLC277CDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CDR TLC277CDR
TLC277CDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CDRG4 TLC277CDRG4
TLC277CP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC277CP TLC277CP
TLC277CPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC277CPE4 TLC277CPE4
TLC277CPSR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CPSR TLC277CPSR
TLC277CPSRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277CPSRG4 TLC277CPSRG4
TLC277ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277ID TLC277ID
TLC277IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277IDG4 TLC277IDG4
TLC277IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277IDR TLC277IDR
TLC277IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC277IDRG4 TLC277IDRG4
TLC277IP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC277IP TLC277IP
TLC277IPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC277IPE4 TLC277IPE4
TLC277 应用技术支持与电子电路设计开发资源下载
  1. TLC277 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)