TLV2362 双路高性能低电压运算放大器
The TLV236x devices are high-performance dual operational amplifiers built using an original Texas Instruments bipolar process. These devices can be operated at a very low supply voltage (±1 V), while maintaining a wide output swing. The TLV236x devices offer a dramatically improved dynamic range of signal conditioning in low-voltage systems. The TLV236x devices also provide higher performance than other general-purpose operational amplifiers by combining higher unity-gain bandwidth and faster slew rate. With their low distortion and low-noise performance, these devices are well suited for audio applications.
| TLV2362 | |
| Iq per channel(Max)(mA) | 2.25 |
| VIO (25 deg C)(Max)(mV) | 6 |
| CMRR(Min)(dB) | 86 |
| Vn at 1kHz(Typ)(nV/rtHz) | 9 |
| Rail-Rail | Out |
| IIB(Max)(pA) | 150000 |
| Slew Rate(Min)(V/us) | 2.5 |
| Slew Rate(Typ)(V/us) | 3 |
| GBW(Typ)(MHz) | 6 |
| Spec'd at Vs(V) | +/-2.5 |
| VIO (Full Range)(Max)(mV) | 7.5 |
| Vs(Min)(V) | 2 |
| Vs(Max)(V) | 5 |
| Pin/Package | 8PDIP, 8SOIC |
| Vio(Max)(mV) | 7.5 |
| Supply Voltage 5(V) | Yes |
| Open Loop Gain(Min)(dB) | 60 |
| IQ Per Amp (+/-)(Max)(mA) | 2.25 |
| Offset Voltage (+/-)(Max)(mV) | 7.5 |
| Number of Channels | 2 |
| Approx. Price (US$) | 0.55 | 1ku |
| Operating Temperature Range(C) | -40 to 85 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 2 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 5 |
TLV2362 特性
- Low Supply-Voltage Operation ...VCC = ±1 V Min
- Wide Bandwidth ...7 MHz Typ at VCC± = ±2.5 V
- High Slew Rate ...3 V/µs Typ at VCC± = ±2.5 V
- Wide Output Voltage Swing . . . ±2.4 V Typ at VCC ± = ±2.5 V, RL = 10 k
- Low Noise ...8 nV/
Hz Typ at f = 1 kHz
TLV2362 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLV2362ID | ACTIVE | -40 to 85 | 0.70 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLV2362IDE4 | ACTIVE | -40 to 85 | 0.70 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLV2362IDG4 | ACTIVE | -40 to 85 | 0.70 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLV2362IDR | ACTIVE | -40 to 85 | 0.55 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLV2362IDRE4 | ACTIVE | -40 to 85 | 0.55 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLV2362IDRG4 | ACTIVE | -40 to 85 | 0.55 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLV2362IP | ACTIVE | -40 to 85 | 0.70 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| TLV2362IPE4 | ACTIVE | -40 to 85 | 0.70 | 1ku | PDIP (P) | 8 | 50 | TUBE |
TLV2362 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLV2362ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362ID | TLV2362ID |
| TLV2362IDE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362IDE4 | TLV2362IDE4 |
| TLV2362IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362IDG4 | TLV2362IDG4 |
| TLV2362IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362IDR | TLV2362IDR |
| TLV2362IDRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362IDRE4 | TLV2362IDRE4 |
| TLV2362IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLV2362IDRG4 | TLV2362IDRG4 |
| TLV2362IP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLV2362IP | TLV2362IP |
| TLV2362IPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLV2362IPE4 | TLV2362IPE4 |
TLV2362 应用技术支持与电子电路设计开发资源下载
- TLV2362 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
