TLV342 低电压轨至轨输出 CMOS 运算放大器

The TLV341, TLV342, and TLV344 are single, dual, and quad CMOS operational amplifiers, respectively, with low-voltage, low-power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typ) and an offset voltage of 0.3 mV (typ). For applications requiring excellent dc precision, the A grade (TLV34xA) has a low offset voltage of 1.25 mV (max) at 25°C.

These single-supply amplifiers are designed specifically for ultra-low-voltage (1.5-V to 5-V) operation, with a common-mode input voltage range that typically extends from –0.2 V to 0.5 V from the positive supply rail. Additional features include 20-nV/Hz voltage noise at 10 kHz, 2.3-MHz unity-gain bandwidth, and 0


TLV342
Iq per channel(Max)(mA) 0.15  
VIO (25 deg C)(Max)(mV) 4  
CMRR(Min)(dB) 50  
Vn at 1kHz(Typ)(nV/rtHz) 33  
Rail-Rail Out  
IIB(Max)(pA) 3000  
Slew Rate(Typ)(V/us) 0.9  
GBW(Typ)(MHz) 2.2  
Spec'd at Vs(V) 1.8  
VIO (Full Range)(Max)(mV) 4.5  
Vs(Min)(V) 1.5  
Vs(Max)(V) 5.5  
Pin/Package 10X2QFN, 8SOIC, 8MSOP  
Vio(Max)(mV) 4.5  
Supply Voltage 5(V) Yes  
Open Loop Gain(Min)(dB) 55  
Offset Drift(Typ)(uV/C) 1.9  
IQ Per Amp (+/-)(Max)(mA) 0.15  
Offset Voltage (+/-)(Max)(mV) 4.5  
Number of Channels 2  
Approx. Price (US$) 0.41 | 1ku  
Operating Temperature Range(C) -40 to 125  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 1.5  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 5.5  
TLV342 特性
TLV342 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLV342ID ACTIVE -40 to 125 0.49 | 1ku SOIC (D) | 8 75 | TUBE  
TLV342IDE4 ACTIVE -40 to 125 0.49 | 1ku SOIC (D) | 8 75 | TUBE  
TLV342IDG4 ACTIVE -40 to 125 0.49 | 1ku SOIC (D) | 8 75 | TUBE  
TLV342IDGKR ACTIVE -40 to 125 0.45 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
TLV342IDGKRG4 ACTIVE -40 to 125 0.45 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
TLV342IDR ACTIVE -40 to 125 0.41 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLV342IDRE4 ACTIVE -40 to 125 0.41 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLV342IDRG4 ACTIVE -40 to 125 0.41 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLV342IRUGR ACTIVE -40 to 125 0.45 | 1ku X2QFN (RUG) | 10 3000 | LARGE T&R  
TLV342IRUGRG4 ACTIVE -40 to 125 0.45 | 1ku X2QFN (RUG) | 10 3000 | LARGE T&R  
TLV342 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLV342ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342ID TLV342ID
TLV342IDE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDE4 TLV342IDE4
TLV342IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDG4 TLV342IDG4
TLV342IDGKR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDGKR TLV342IDGKR
TLV342IDGKRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDGKRG4 TLV342IDGKRG4
TLV342IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDR TLV342IDR
TLV342IDRE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDRE4 TLV342IDRE4
TLV342IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IDRG4 TLV342IDRG4
TLV342IRUGR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IRUGR TLV342IRUGR
TLV342IRUGRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLV342IRUGRG4 TLV342IRUGRG4
TLV342 应用技术支持与电子电路设计开发资源下载
  1. TLV342 数据资料 dataSheet 下载.PDF
  2. TI 德州仪标准线性放大器产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)