TS321 低功耗单路运算放大器
The TS321 is a bipolar operational amplifier for cost-sensitive applications in which space savings are important.
|
TS321 |
Iq per channel(Max)(mA) |
1 |
VIO (25 deg C)(Max)(mV) |
4 |
CMRR(Min)(dB) |
65 |
Vn at 1kHz(Typ)(nV/rtHz) |
50 |
IIB(Max)(pA) |
200000 |
Slew Rate(Typ)(V/us) |
0.4 |
GBW(Typ)(MHz) |
0.8 |
Spec'd at Vs(V) |
5 |
VIO (Full Range)(Max)(mV) |
5 |
Vs(Min)(V) |
3 |
Vs(Max)(V) |
30 |
Pin/Package |
8SOIC, 5SOT-23 |
Vio(Max)(mV) |
5 |
Supply Voltage 5(V) |
Yes |
Open Loop Gain(Min)(dB) |
88 |
Offset Voltage (+/-)(Max)(mV) |
5 |
Number of Channels |
1 |
Approx. Price (US$) |
0.30 | 1ku |
Operating Temperature Range(C) |
-40 to 125 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
3 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
30 |
TS321 特性
- Wide Power-Supply Range
- Single Supply . . . 3 V to 30 V
- Dual Supply . . . ±1.5 V to ±15 V
- Large Output Voltage Swing . . . 0 V to 3.5 V (Min) (VCC = 5 V)
- Low Supply Current . . . 500 µA (Typ)
- Low Input Bias Current . . . 20 nA (Typ)
- Stable With High Capacitive Loads
TS321 芯片订购指南
器件 |
状态 |
温度 |
价格(美元) |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
TS321ID |
ACTIVE |
-40 to 125 |
0.36 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TS321IDBVR |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOT-23 (DBV) | 5 |
3000 | LARGE T&R |
|
TS321IDBVRE4 |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOT-23 (DBV) | 5 |
3000 | LARGE T&R |
|
TS321IDBVRG4 |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOT-23 (DBV) | 5 |
3000 | LARGE T&R |
|
TS321IDBVT |
ACTIVE |
-40 to 125 |
0.55 | 1ku |
SOT-23 (DBV) | 5 |
250 | SMALL T&R |
|
TS321IDBVTE4 |
ACTIVE |
-40 to 125 |
0.55 | 1ku |
SOT-23 (DBV) | 5 |
250 | SMALL T&R |
|
TS321IDBVTG4 |
ACTIVE |
-40 to 125 |
0.55 | 1ku |
SOT-23 (DBV) | 5 |
250 | SMALL T&R |
|
TS321IDE4 |
ACTIVE |
-40 to 125 |
0.36 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TS321IDG4 |
ACTIVE |
-40 to 125 |
0.36 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TS321IDR |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TS321IDRE4 |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TS321IDRG4 |
ACTIVE |
-40 to 125 |
0.30 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TS321 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
TS321ID |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321ID |
TS321ID |
TS321IDBVR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVR |
TS321IDBVR |
TS321IDBVRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVRE4 |
TS321IDBVRE4 |
TS321IDBVRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVRG4 |
TS321IDBVRG4 |
TS321IDBVT |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVT |
TS321IDBVT |
TS321IDBVTE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVTE4 |
TS321IDBVTE4 |
TS321IDBVTG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDBVTG4 |
TS321IDBVTG4 |
TS321IDE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDE4 |
TS321IDE4 |
TS321IDG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDG4 |
TS321IDG4 |
TS321IDR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDR |
TS321IDR |
TS321IDRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDRE4 |
TS321IDRE4 |
TS321IDRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS321IDRG4 |
TS321IDRG4 |
TS321 应用技术支持与电子电路设计开发资源下载
- TS321 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
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