This 4-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.
When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
The TXB0104 is designed so that the OE input circuit is supplied by VCCA.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down
TXB0104 | |
Vcc range(V) | 1.2 to 5.5 |
No. of Bits | 4 |
Bus Drive(ma) | 0.005 |
tpd max(ns) | 1,5.5,5.8 |
Pin/Package | 12BGA MICROSTAR JUNIOR, 12DSBGA, 12UQFN, 14SOIC, 14TSSOP, 14VQFN |
Operating Temperature Range(°C) | -40 to 85 |
Approx. Price (US$) | 0.55 | 1ku |
Rating | Catalog |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TXB0104D | ACTIVE | -40 to 85 | 0.70 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TXB0104DG4 | ACTIVE | -40 to 85 | 0.70 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TXB0104DR | ACTIVE | -40 to 85 | 0.55 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TXB0104DRG4 | ACTIVE | -40 to 85 | 0.55 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TXB0104GXUR | ACTIVE | -40 to 85 | 0.55 | 1ku | BGA MICROSTAR JUNIOR (GXU) | 12 | 2500 | LARGE T&R | |
TXB0104PWR | ACTIVE | -40 to 85 | 0.55 | 1ku | TSSOP (PW) | 14 | 2000 | LARGE T&R | |
TXB0104PWRG4 | ACTIVE | -40 to 85 | 0.55 | 1ku | TSSOP (PW) | 14 | 2000 | LARGE T&R | |
TXB0104RGYR | ACTIVE | -40 to 85 | 0.55 | 1ku | VQFN (RGY) | 14 | 3000 | LARGE T&R | |
TXB0104RGYRG4 | ACTIVE | -40 to 85 | 0.55 | 1ku | VQFN (RGY) | 14 | 3000 | LARGE T&R | |
TXB0104RUTR | ACTIVE | -40 to 85 | 0.55 | 1ku | UQFN (RUT) | 12 | 3000 | LARGE T&R | |
TXB0104YZTR | ACTIVE | -40 to 85 | 0.60 | 1ku | DSBGA (YZT) | 12 | 3000 | LARGE T&R | |
TXB0104ZXUR | ACTIVE | -40 to 85 | 0.55 | 1ku | BGA MICROSTAR JUNIOR (ZXU) | 12 | 2500 | LARGE T&R |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TXB0104D | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104D | TXB0104D |
TXB0104DG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104DG4 | TXB0104DG4 |
TXB0104DR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104DR | TXB0104DR |
TXB0104DRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104DRG4 | TXB0104DRG4 |
TXB0104GXUR | TBD | SNPB | Level-1-240C-UNLIM | TXB0104GXUR | TXB0104GXUR |
TXB0104PWR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104PWR | TXB0104PWR |
TXB0104PWRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104PWRG4 | TXB0104PWRG4 |
TXB0104RGYR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-2-260C-1 YEAR | TXB0104RGYR | TXB0104RGYR |
TXB0104RGYRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-2-260C-1 YEAR | TXB0104RGYRG4 | TXB0104RGYRG4 |
TXB0104RUTR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TXB0104RUTR | TXB0104RUTR |
TXB0104YZTR | Green (RoHS & no Sb/Br) | SNAGCU | Level-1-260C-UNLIM | TXB0104YZTR | TXB0104YZTR |
TXB0104ZXUR | Green (RoHS & no Sb/Br) | SNAGCU | Level-1-260C-UNLIM | TXB0104ZXUR | TXB0104ZXUR |