FP1189-G 0.5 W GaAs HFET

The TriQuint FP1189-G is a high performance 0.5 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1 dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to TriQuint's long history of producing high reliability and quality components. The FP1189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant and green SOT-89 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.

技术特性
  • 50 to 4000 MHz
  • +27 dBm P1dB
  • +40 dBm Output IP3
  • High drain efficiency
  • 20.5 dB gain @ 900 MHz
  • Lead-free / green / RoHS compliant
  • SOT-89 package
  • MTTF > 100 years
订购信息 Ordering Information
  • FP1189-G
技术指标
频率(GHz) 增益(dB) P1dB (dBm) OIP3 (dBm) NF/PAE Vdd (V) Idd (mA) 封装
0.05 - 4 19 27 40 2.7 8 125 SOT-89
应用领域 APPLICATION
  • CATV / DBS
  • Defense / Homeland Security
  • Fixed Wireless
  • Industrial, Scientific and Medical (ISM)
  • Mobile Infrastructure
应用技术支持与电子电路设计开发资源下载 版本信息 大小
FP1189-G封装信息:pdf    
FP1189-G封装信息:dwg