T1G4005528-FS 55W, 28V, DC-3.5 GHz, GaN 射频功率晶体管

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

技术特性
  • Frequency: DC to 3.5 GHz
  • Linear Gain: > 15 dB at 3.5 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): 55 W at 3.5 GHz
  • Lead-free and RoHS compliant
技术指标
频率(GHz) 增益(dB) 功率(dBm) NF/PAE Vd(V) IQ(mA)
DC - 3.5 15 47.2 >50% 28 200
T1G4005528-FS 产品实物图

T1G4005528-FS 产品实物图

应用领域 APPLICATION
  • Avionics
  • Civilian Radar
  • Military Radar Systems
  • Professional and Military Radio
  • Radar
  • Test Instrumentation
  • Wideband and Narrowband Amplifiers
订购信息 Ordering Information
T1G4005528-FS  Packaged part: Flangeless  EAR99 
T1G4005528-FS-EVB1  3.0-3.5 GHz Eval Brd  EAR99 
功能框图 Functional Block Diagram

T1G4005528-FS 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
T1G4005528-FS:S-参数    
T1G4005528-FS材料清单:pdf    
T1G4005528-FS布局文件    
T1G4005528-FS 数据资料DataSheet下载:pdf Rev.V2 2 页