T1G4005528-FS 55W, 28V, DC-3.5 GHz, GaN 射频功率晶体管
The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
技术特性
- Frequency: DC to 3.5 GHz
- Linear Gain: > 15 dB at 3.5 GHz
- Operating Voltage: 28 V
- Output Power (P3dB): 55 W at 3.5 GHz
- Lead-free and RoHS compliant
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 3.5 |
15 |
47.2 |
>50% |
28 |
200 |
T1G4005528-FS 产品实物图
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应用领域 APPLICATION
- Avionics
- Civilian Radar
- Military Radar Systems
- Professional and Military Radio
- Radar
- Test Instrumentation
- Wideband and Narrowband Amplifiers
订购信息 Ordering Information
| T1G4005528-FS |
Packaged part: Flangeless |
EAR99 |
| T1G4005528-FS-EVB1 |
3.0-3.5 GHz Eval Brd |
EAR99 |
功能框图 Functional Block Diagram
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