T1G6003028-FS 30W, 28V, DC-6GHz GaN RF 功率晶体管

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

技术特性
  • Frequency: DC to 6 GHz
  • Output Power (P3dB): 30 W at 6 GHz
  • Linear Gain: >14 dB at 6 GHz
  • Operating Voltage: 28 V
  • Low thermal resistance package
订购信息 Ordering Information
T1G6003028-FS  Packaged part: Flangeless  EAR99 
T1G6003028-FS-EVB1  5.4-5.9 GHz Eval. Board  EAR99 
技术指标
频率(GHz) 增益(dB) 功率(dBm) NF/PAE Vd(V) IQ(mA)
DC - 6 14 45 - 28 200
应用领域 APPLICATION
  • Military Radar Systems
  • Civilian Radar
  • Communications Systems
  • Professional and Military Radio
  • Test Instrumentation
  • Wideband and Narrowband Amplifiers
  • Jammers
T1G6003028-FS 产品实物图

T1G6003028-FS 产品实物图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
T1G6003028-FS:S 参数    
T1G6003028-FS材料清单    
T1G6003028-FS布局文件    
T1G6003028-FS 数据资料DataSheet下载:PDF Rev.V2 2 页